![]() ![]() Florida/Tohoku Univ./Rice Univ./Texas A&M Univ. Paper #28.1, “Computational Screening and Multiscale Simulation of Barrier-Free Contacts for 2D Semiconductor pFETs,” N. Chung et al, TSMC/National Yang Ming Chiao Tung University/National Applied Research Laboratories Taiwan However, most of the reported MoS2 phototransistors have adopted a back-gate field-effect transistor (FET) structure, requiring applied gate bias voltages as high as 70 V, which made it impossible to modulate each detecting. Paper #34.5, “First Demonstration of GAA Monolayer-MoS2 Nanosheet nFET with 410 μA/μm ID at 1V VD at 40nm Gate Length,” Y-Y. Molybdenum disulfide (MoS2) is a promising candidate for the development of high-performance photodetectors, due to its excellent electric and optoelectronic properties. Paper #7.4, “Nearly Ideal Subthreshold Swing in Monolayer MoS2 Top-Gate nFETs with Scaled EOT of 1 nm,” T-E Lee and Y-C Su et al, TSMC/National Yang Ming Chiao Tung University/National Applied Research Laboratories. These include metallic contacts using a material like 1T-TiS2, and bulk semimetallic contacts using various materials, of which Co3Sn2S2 was identified as exceptionally good, with a theoretical contact resistance as low as 20 Ω While progress has been made with n-type contacts for use with nFETs, but low-resistance p-type contacts for use with pFETs are more challenging because of the electro-thermodynamicĪ TSMC-led team conducted computational computer modeling and simulation studies to investigate various materials for use as p-type contacts to the 2D material WSe2. Low-resistance metal contacts to 2D materials are a bottleneck for these transistors. The researchers say higher drive current can be achieved by stacking multiple channel layers. With a gate length of 40nm, the transistor exhibited a current density of ~410 ♚/µm at 1V, achieved with a monolayer channel that was ~0.7 nm thick. The team built the first-ever monolayer MoS2 nanosheet FET in a GAA configuration. While silicon nanosheets integrated with monolayer TMD as the channel material are promising, both the performance of such devices and their potential fabrication processes still need to be explored. Nanosheet GAA devices are considered the most promising candidate for next-generation device architectures because they offer improved electrostatic control, relatively high drive current and the feasibility of implementing devices with variable widths.Ĭurrently, gate-length scaling and high electrostatic control come from thinning down the Si channel, but in the future extreme gate-length scaling could be enabled by using monolayer TMDs. How long has the semiconductor industry got?Īnother team at TSMC has also developed the first 2D nanosheet transistor with a gate all around (GAA) architecture.This oxide is used to demonstrate a room. Another transistor that has a bottom and a top gate made of Cr/Au isolated by a layer of hafnium dioxide is studied. This kind on transistor has a single silicon bottom gate. The results are compared with the simulated ones. The subthreshold swing (SS) is key in MOSFET transistors, and the devices had a nearly ideal SS of <70 mV/dec. The first model is a transistor with a monolayer and a four layer MoS 2 channel. ![]()
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